Tunable Semiconductors: Control over Carrier States and Excitations in Layered Hybrid Organic-Inorganic Perovskites

For a class of 2D hybrid organic-inorganic perovskite semiconductors based on pi-conjugated organic cations, we predict quantitatively how varying the organic and inorganic component allows control over the nature, energy and localization of carrier states in a quantum-well-like fashion. Our first-principles predictions, based on large-scale hybrid density-functional theory with spin-orbit coupling, show that the interface between the organic and inorganic parts within a single hybrid can be modulated systematically, enabling us to select between different type-I and type-II energy level alignments. Energy levels, recombination properties and transport behavior of electrons and holes thus become tunable by choosing specific organic functionalizations and juxtaposing them with suitable inorganic components.

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Chiliu

FIG.(a) Structure of AE4TPbBr4, fully relaxed by DFT-PBE + TS taking the experimental (x-ray diffraction) structure as the input. (b) Possible energy level schemes (Ia, Ib, IIa, IIb) for the alternating organic-inorganic perovskite structure are shown, with the overall band gap indicated by arrows and dashed lines.